High Dielectric Constant Hf-Sn-Ti-O Thin Films
High dielectric constant Hf-Sn-Ti-O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-70-nm-thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 3-4 MV/cm, yielding a figure of merit ∈∈0Ebr ∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7 - 10-6 A/cm2.
MSU Digital Commons Citation
Schneemeyer, Lynn; Van Dover, Robert B.; and Fleming, R. M., "High Dielectric Constant Hf-Sn-Ti-O Thin Films" (1999). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 142.