Advanced Amorphous Dielectrics for Embedded Capacitors
New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.
MSU Digital Commons Citation
Alers, Glenn B.; van Dover, Robert B.; Schneemeyer, Lynn; Stirling, L.; Sung, C. Y.; Diodato, P. W.; Liu, R.; Wong, Y. H.; Fleming, R. M.; Lang, D. V.; and Chang, J. P., "Advanced Amorphous Dielectrics for Embedded Capacitors" (1999). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 202.