Resistive Transitions of Ni-Doped Ba2YCu3O7 in High-Magnetic Fields

Authors

K. A. Delin, Massachusetts Institute of TechnologyFollow
E. J. Mcniff, LucentFollow
Simon N. Foner, Francis Bitter National Magnet LaboratoryFollow
Terry P. Orlando, Massachusetts Institute of TechnologyFollow
Robert B. Van Dover, Cornell UniversityFollow
Lynn Schneemeyer, Montclair State UniversityFollow
J. V. Waszczak, University of WashingtonFollow

Document Type

Article

Publication Date

1-1-1989

Abstract

Resistive transitions of single crystal Ba2YCu3-χNiχO7 were studied in magnetic field up to 20 tesla. For dop concentrations of χ = 0.01 and χ 0.03, the transition temperature in zero field decreased from the undoped value of 88K to 82K and 76K respectively, while the transition width †T (10%-90%) is still less than 1K. Moreover, Ni-doping has a dramatic effect on the resistive transition, tending to suppress the field dependent broadening.

DOI

10.1016/0921-4534(89)91226-4

Montclair State University Digital Commons Citation

Delin, K. A.; Mcniff, E. J.; Foner, Simon N.; Orlando, Terry P.; Van Dover, Robert B.; Schneemeyer, Lynn; and Waszczak, J. V., "Resistive Transitions of Ni-Doped Ba2YCu3O7 in High-Magnetic Fields" (1989). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 256.
https://digitalcommons.montclair.edu/chem-biochem-facpubs/256