Improved Properties of TaOx Films Doped with Al and N
Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.
MSU Digital Commons Citation
Van Dover, Robert B.; Schneemeyer, Lynn; Fleming, R. M.; and Werder, D. J., "Improved Properties of TaOx Films Doped with Al and N" (1999). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 270.