Efficiency Losses from Carrier-Type Inhomogeneity in Tungsten Diselenide Photoelectrodes
The coexistence of macroscopic p- and n-type domains in nominally smooth, single-crystal tungsten diselenide photoelectrodes leads to substantial efficiency losses in these crystals. The presence of such regions is demonstrated by rotating-disk electrode experiments, Seebeck coefficient measurements, and in situ topographic photogenerated carrier-collection analysis with a scanning laser spot. These results indicate the importance of controlling growth parameters to yield homogeneously doped crystals to achieve maximum solar conversion efficiencies.
Montclair State University Digital Commons Citation
Menezes, S.; Schneemeyer, Lynn; and Lewerenz, H. J., "Efficiency Losses from Carrier-Type Inhomogeneity in Tungsten Diselenide Photoelectrodes" (1981). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 311.