Efficiency Losses from Carrier-Type Inhomogeneity in Tungsten Diselenide Photoelectrodes
The coexistence of macroscopic p- and n-type domains in nominally smooth, single-crystal tungsten diselenide photoelectrodes leads to substantial efficiency losses in these crystals. The presence of such regions is demonstrated by rotating-disk electrode experiments, Seebeck coefficient measurements, and in situ topographic photogenerated carrier-collection analysis with a scanning laser spot. These results indicate the importance of controlling growth parameters to yield homogeneously doped crystals to achieve maximum solar conversion efficiencies.
MSU Digital Commons Citation
Menezes, S.; Schneemeyer, Lynn; and Lewerenz, H. J., "Efficiency Losses from Carrier-Type Inhomogeneity in Tungsten Diselenide Photoelectrodes" (1981). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 311.