Composition-Dependent Crystallization of Alternative Gate Dielectrics

Authors

R. B. Van Dover, Cornell UniversityFollow
Martin L. Green, National Institute of Standards and Technology
Lalita Manchanda, LSI Logic Corporation
Lynn Schneemeyer, Montclair State UniversityFollow
Theo Siegrist, Florida State UniversityFollow

Document Type

Article

Publication Date

8-18-2003

Abstract

The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.

DOI

10.1063/1.1603341

Montclair State University Digital Commons Citation

Van Dover, R. B.; Green, Martin L.; Manchanda, Lalita; Schneemeyer, Lynn; and Siegrist, Theo, "Composition-Dependent Crystallization of Alternative Gate Dielectrics" (2003). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 315.
https://digitalcommons.montclair.edu/chem-biochem-facpubs/315