Title

Composition-Dependent Crystallization of Alternative Gate Dielectrics

Document Type

Article

Publication Date

8-18-2003

Abstract

The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.

DOI

10.1063/1.1603341

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