Composition-Dependent Crystallization of Alternative Gate Dielectrics
The crystallization of amorphous oxides was investigated. These oxides are considered likely candidates to replace amorphous SiO2 as an alternative gate dielectrics. Dielectric constants were determined using films deposited on TiN-coated substrates. The results show that the silicate systems are not likely to be useful as replacements for SiO2, while aluminates are more promising.
MSU Digital Commons Citation
Van Dover, R. B.; Green, Martin L.; Manchanda, Lalita; Schneemeyer, Lynn; and Siegrist, Theo, "Composition-Dependent Crystallization of Alternative Gate Dielectrics" (2003). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 315.