Advanced Dielectrics for Gate Oxide, DRAM and Rf Capacitors
A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.
MSU Digital Commons Citation
van Dover, Robert B.; Fleming, R. M.; Schneemeyer, Lynn; Alers, Glenn B.; and Werder, D. J., "Advanced Dielectrics for Gate Oxide, DRAM and Rf Capacitors" (1998). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 34.