Large Electronic-Density Increase On Cooling a Layered Metal: Doped Bi2Te3

Authors

Gordon A. Thomas, New Jersey Institute of TechnologyFollow
D. H. Rapkine, NokiaFollow
Robert B. Van Dover, Cornell UniversityFollow
L. F. Mattheiss, Lucent
Walter A. Sunder, Lucent
Lynn Schneemeyer, Montclair State UniversityFollow
Joseph V. Waszczak, University of WashingtonFollow

Document Type

Article

Publication Date

1-1-1992

Abstract

We have carried out optical and transport measurements of the free carriers and optical measurements of states above the semiconducting energy gap in the layered crystal Bi2Te3. We find that cooling causes a substantial amount of spectral weight to condense from the above-gap states into the metallic states.

DOI

10.1103/PhysRevB.46.1553

Montclair State University Digital Commons Citation

Thomas, Gordon A.; Rapkine, D. H.; Van Dover, Robert B.; Mattheiss, L. F.; Sunder, Walter A.; Schneemeyer, Lynn; and Waszczak, Joseph V., "Large Electronic-Density Increase On Cooling a Layered Metal: Doped Bi2Te3" (1992). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 439.
https://digitalcommons.montclair.edu/chem-biochem-facpubs/439