Large Electronic-Density Increase On Cooling a Layered Metal: Doped Bi2Te3
We have carried out optical and transport measurements of the free carriers and optical measurements of states above the semiconducting energy gap in the layered crystal Bi2Te3. We find that cooling causes a substantial amount of spectral weight to condense from the above-gap states into the metallic states.
MSU Digital Commons Citation
Thomas, Gordon A.; Rapkine, D. H.; Van Dover, Robert B.; Mattheiss, L. F.; Sunder, Walter A.; Schneemeyer, Lynn; and Waszczak, Joseph V., "Large Electronic-Density Increase On Cooling a Layered Metal: Doped Bi2Te3" (1992). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 439.