Reproducibility in Tunneling Achieved Through Liquid Etching of YBCO
We have developed a procedure for preparation of reproducible tunnel junctions of the S1IS2 type, where S1 is a chemically etched single crystal of YBa2Cu3Ox (YBCO), S2 is a film of Pb, and I is an insulting barrier of unknown nature which is formated at the surface of YBCO at 100°C in air. The structure in the dV/di (V) first appears at T = Tc = 89K and sharpens as T is decreased. There are two gap-like structures in dV/di at ∼4 and ∼19mV, and an additional structure at ∼45mV.
MSU Digital Commons Citation
Gurvitch, Michael; Valles, James M.; Dynes, Robert C.; Cucolo, A. M.; and Schneemeyer, Lynn, "Reproducibility in Tunneling Achieved Through Liquid Etching of YBCO" (1989). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 441.