Improved Properties of TaOx Films Doped with Al and N

Authors

Robert B. Van Dover, Cornell University
Lynn Schneemeyer, Montclair State UniversityFollow
R. M. Fleming, Sandia National Laboratories
D. J. Werder, Lucent

Document Type

Conference Proceeding

Publication Date

1-1-1999

Journal / Book Title

MRS Online Proceedings Library (OPL)

Abstract

Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

Montclair State University Digital Commons Citation

Van Dover, Robert B.; Schneemeyer, Lynn; Fleming, R. M.; and Werder, D. J., "Improved Properties of TaOx Films Doped with Al and N" (1999). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 270.
https://digitalcommons.montclair.edu/chem-biochem-facpubs/270

Published Citation

Van Dover, R. B., Schneemeyer, L. F., Fleming, R. M., & Werder, D. J. (1998). Improved properties of TaOx films doped with Al and N. MRS Online Proceedings Library (OPL), 541.