"Improved Properties of TaOx Films Doped with Al and N" by Robert B. Van Dover, Lynn Schneemeyer et al.
 

Document Type

Conference Proceeding

Publication Date

1-1-1999

Journal / Book Title

MRS Online Proceedings Library (OPL)

Abstract

Simultaneous addition of Al and N to Ta-O thin films is found to significantly improve the dielectric properties of the films. Specifically, substitution of 10-40 at. % Al for Ta along with approx. 2 at. % N for O is found to decrease the density of catastrophic defects in the films, resulting in high and statistically more uniform breakdown voltages. This conclusion is based on evaluation of approx. 750 individual capacitors in each experiment.

DOI

10.1557/PROC-541-561

Published Citation

Van Dover, R. B., Schneemeyer, L. F., Fleming, R. M., & Werder, D. J. (1998). Improved properties of TaOx films doped with Al and N. MRS Online Proceedings Library (OPL), 541.

Plum Print visual indicator of research metrics
PlumX Metrics
  • Citations
    • Citation Indexes: 1
  • Usage
    • Downloads: 43
    • Abstract Views: 2
  • Captures
    • Readers: 1
see details

Included in

Chemistry Commons

Share

COinS