Advanced Amorphous Dielectrics for Embedded Capacitors

Authors

Glenn B. Alers, University of California at Santa CruzFollow
Robert B. van Dover, Cornell University
Lynn Schneemeyer, Montclair State UniversityFollow
L. Stirling, Lucent
C. Y. Sung, Lucent
P. W. Diodato, Lucent
R. Liu, Lucent
Y. H. Wong, Lucent
R. M. Fleming, Sandia National LaboratoriesFollow
D. V. Lang, Lucent
J. P. Chang, Lucent

Document Type

Conference Proceeding

Publication Date

12-1-1999

Journal / Book Title

International Electron Devices Meeting 1999

Abstract

New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

DOI

10.1109/IEDM.1999.824270

Montclair State University Digital Commons Citation

Alers, Glenn B.; van Dover, Robert B.; Schneemeyer, Lynn; Stirling, L.; Sung, C. Y.; Diodato, P. W.; Liu, R.; Wong, Y. H.; Fleming, R. M.; Lang, D. V.; and Chang, J. P., "Advanced Amorphous Dielectrics for Embedded Capacitors" (1999). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 202.
https://digitalcommons.montclair.edu/chem-biochem-facpubs/202