High Dielectric Constant Hf-Ti-Sn-O Off-Axis Cosputtered Films
Document Type
Conference Proceeding
Publication Date
1-1-1999
Abstract
New Hf-Sn-Ti-O thin-film dielectric materials were explored using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250°C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/μm2. Breakdown fields were measured to be about 4 MV/cm, yielding a Figure of Merit εε0Ebr = 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10-7-10-6 A/cm2. Film properties are strongly dependent on substrate temperature during deposition. Like their recently reported zirconium analogs, these materials are of interest for use in Si-IC device technology, for example as storage capacitors in DRAM.
Montclair State University Digital Commons Citation
Schneemeyer, Lynn; Van Dover, Robert B.; and Fleming, R. M., "High Dielectric Constant Hf-Ti-Sn-O Off-Axis Cosputtered Films" (1999). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 203.
https://digitalcommons.montclair.edu/chem-biochem-facpubs/203