Advanced Dielectrics for Gate Oxide, DRAM and Rf Capacitors

Authors

Robert B. van Dover, Cornell University
R. M. Fleming, Sandia National LaboratoriesFollow
Lynn Schneemeyer, Montclair State UniversityFollow
Glenn B. Alers, University of California at Santa CruzFollow
D. J. Werder, LucentFollow

Document Type

Conference Proceeding

Publication Date

12-1-1998

Abstract

A new class of high dielectric constant materials is presented based on binary and ternary amorphous metal oxides. These films are compatible with low temperature processing and can be used with conventional metal electrodes like TiN. Metal alloys of both Tantalum oxide and titanium oxide will be discussed with dielectric constants as high as 62 and leakage currents of less than 10-8 A/cm2 at IMV/cm.

Montclair State University Digital Commons Citation

van Dover, Robert B.; Fleming, R. M.; Schneemeyer, Lynn; Alers, Glenn B.; and Werder, D. J., "Advanced Dielectrics for Gate Oxide, DRAM and Rf Capacitors" (1998). Department of Chemistry and Biochemistry Faculty Scholarship and Creative Works. 34.
https://digitalcommons.montclair.edu/chem-biochem-facpubs/34